In modern electronics design, power supply efficiency boasts being one of the most important factors. Whether it be a consumer appliance, an industrial machine, or a renewable energy system – energy ...

Abstract: This study presents the fabrication of vertical GaN junction barrier Schottky (JBS) diodes by using magnesium (Mg) ion implantation on a channeling condition and subsequent ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

Researchers have discovered the mechanism for supercurrent rectification, in which current flows primarily in one direction in a superconductor. By using a specific iron-based superconductor, they ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...

For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice. Current and voltage are indeed important, but power gives us a ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode. Designed for industrial use, the CoolGaN G5 ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...

Creative Commons (CC): This is a Creative Commons license. Attribution (BY): Credit must be given to the creator. This study presents the fabrication and characterization of flexible Schottky diodes ...

Infineon expands 2000V G5 product family with new devices available with current ratings ranging from 10 to 80 A Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a ...