Wide-bandgap (WBG) power semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) enable improved power conversion efficiencies. The improved power density that they provide ...

AI workloads consuming 1.5 kW per chip—with projections reaching 4-5 kW—are forcing a fundamental shift in data center power architectures. The challenge is no longer just capacity, but delivery.

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NTT, Inc. has demonstrated amplification of high-frequency wireless signals using aluminum nitride (AlN)–based transistors. NTT, Inc. has achieved a world first by demonstrating amplification of ...

SiC and GaN stand center stage, controlling many different industries’ dynamics. With power management becoming a fundamental aspect of emerging electronics applications such as vehicle ...

Wolfspeed announced Toyota will deploy its automotive-grade SiC MOSFETs to power onboard charging across its BEV lineup. While SiC is already well known for enabling fast switching, high efficiency, ...

Empower announced a new corporate headquarters in Milpitas, California, and a dedicated R&D center in Munich, Germany. Empower Semiconductor, an AI chipmaker based in Silicon Valley, has announced a ...