Abstract: This work presents a compact D-band multiply-by-9 frequency multiplier in TSMC 16nm technology, featuring the RF p-FinFET devices. The design includes elements such as an inductor-less ...
Abstract: In this work, we propose an energy-efficient 64$\times $ 64 compute-in-memory (CIM) SRAM macro using a 7T bit-cell in 65nm CMOS UMC PDK. It supports 4-bit inputs, 4-bit weights & 4-bit ...
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