G3VM-21MT enables switching measurement signals in test equipment mainly used to perform electrical tests for semiconductor devices. In addition to the MOS FET relay features of compact size and ...

Toshiba's new bare die 1200V SiC MOSFET for automotive traction inverters with a new structure delivers both low On-resistance and high reliability.

When a MOSFET or IGBT gate-threshold voltage is higher than the available drive voltage, it's standard to use an op amp or other driver to bridge the difference. This circuit ...

Cree Inc., a maker of silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky ...

A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Abstract: “The ...

MAPLE GROVE, Minn., Aug. 5, 2025 /PRNewswire/ -- Circuit Check, a global leader in turnkey functional test systems across medical, automotive, industrial, military/aerospace, and emerging AI ...

Circuit Check, a global leader in turnkey functional test systems across medical, automotive, industrial, military/aerospace, and emerging AI applications, today announced the acquisition of ...