Frontgrade™ Technologies, a leading provider of high-reliability electronic solutions for space and national security missions, today announced the expansion of its Magnetoresistive Random Access ...
Memory technology has evolved quickly in recent years, driven by the need to improve on traditional systems. One promising candidate, Magnetoresistive Random Access Memory (MRAM), is gaining attention ...
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Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage
The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known ...
Everspin Awarded $10.5M Contract to Provide MRAM IP and Foundry Services for Purdue University’s ME Commons In-Memory Compute Project Everspin’s AgILYST MRAM IP and manufacturing to support Purdue ...
event, with participation in breakouts and discussion panels. Flash Memory Summit takes place in the same venue beginning on Tuesday and continuing through Thursday, with strong Everspin participation ...
At the recent Flash Memory Summit (FMS), several companies from around the world demoed new memory technology that could change the face of data storage in the future. The summit is an opportunity for ...
Renesas Electronics Corp. has developed two new circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM) test chip with fast read and write ...
Forbes contributors publish independent expert analyses and insights. At the end of the 2025 IEEE IEDM Samsung and other companies sponsored the 17 th annual MRAM Forum. The Forum featured speakers on ...
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