High-power broad-area diode lasers have emerged as a pivotal technology in modern photonics, combining high energy output with the benefits of semiconductor manufacturing. These devices employ wide ...
A technical paper titled “Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)” was published by researchers at University of Illinois at Urbana–Champaign.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback